 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS) Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. The NTE6403 is specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Peak Recurrent Forward Current (PW = 10s, Duty Cycle = 1%, TA = +25C) . . . . . . . . . . . . . . . 1A Peak Non-Recurrent Forward Current (PW = 10s, TA = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Note 1. Derate linearly to zero at +125C. Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited by maximum power rating. Electrical Characteristics: (TA = +25C, Note 3 unless otherwise specified) Parameter Static Switching Voltage Switching Current Absolute Switching Voltage Difference Absolute Switching Current Difference Holding Current OFF State Current VS IS |VS2 - VS1| |IS2 - IS1| IH IB TC VF IGF VF = 5V TA = +25C TA = +85C Temperature Coefficient of Switching Voltage ON State Forward Voltage Drop Forward Gate Current to Trigger TA = -55 to +85C IF = 175mA VF = 5V, RL = 1k 7.5 - - - - - - - - - - - - - - - - 0.05 - - 9.0 120 200 10 .5 0.1 10.0 - 1.7 100 V A mV A mA A A %/C V A Symbol Test Conditions Min Typ Max Unit Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply in either direction of current flow. Electrical Characteristics (Cont'd): (TA = +25C, Note 3 unless otherwise specified) Parameter Dynamic Peak Pulse Amplitude Turn-On Time Turn-Off Time Vo ton toff 3.5 - - - - - - 1.0 30.0 V s s Symbol Test Conditions Min Typ Max Unit Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply in either direction of current flow. A2 G A1 SBS CIRCUIT SYMBOL .135 (3.45) Min .210 (5.33) Max .140 (3.55) Max Seating Plane .245 (6.23) Max .190 (4.82) Min .065 (1.65) .500 (12.7) Min .021 (.445) Dia Max A1 G A2 .100 (2.54) .050 (1.27) .500 (12.7) Min A1 G A2 .100 (2.54) .018 (0.45) Dia Max .105 (2.67) Max .205 (5.2) Max .165 (4.2) Max .105 (2.67) Max .200 (5.08) Max |
Price & Availability of NTE6403
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |